10 duct *., one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 STW8NA80 sth8na80fi n- channel enhancement mode power mos transistors preliminary data type STW8NA80 sth8na80fi vdss 800 v 800 v rds(on) < 1.50 q. < 1.50 n id 7.2 a 4.5 a typical rds(0n) = 1.3 q + 30v gate to source voltage rating 100% avalanche tested repetitive avalanche data at 100c low intrinsic capacitances gate charge minimized reduced threshold voltage spread description this series of power mosfets represents the most advanced high voltage technology. the op- timized cell layout coupled with a new proprietary edge termination concur to give the device low rds(on) and gate charge, unequalled rug- gednessand superior switching performance. applications . high current, high speed switching . switch mode power supplies (smps) . dc-ac converters for welding equipment and uninterruptible power supplies and motor drive absolute maximum ratings to-247 isowatt218 internal schematic diagram q(2) symbol vds vdgr vgs id id idm(') plot v,so tstg t, parameter drain-source voltage (vqs = 0) drain- gate voltage (res = 20 kfi) gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor insulation withstand voltage (dc) storage temperature max. operating junction temperature value STW8NA80 sth8na80fi 800 800 30 7.2 4.5 28.8 175 1.4 ? 4.5 2.8 28.8 70 0.56 4000 -65 to 150 150 unit v v v a a a w w/c v c c ? ) pulse width limited by safe operating area nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
STW8NA80 sth8na80fi thermal data rthj-case rthj-amb rthc-sink i, thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose to-247 0.71 isowatt218 1.78 30 0.1 300 c/w c/w c/w c avalanche characteristics symbol iar eas parameter avalanche current, repetitive or not-repetitive (pulse width limited by t, max, 5 < 1%) single pulse avalanche energy (starting tj = 25 c, id = iar, vdd = 50 v) max value 7.2 700 unit a mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss idss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vos = 0) test conditions ld=250^ia vgs=0 vds = max rating vds = max rating tc=100c vgs = 30 v min. 800 typ. max. 50 500 100 unit v ha ua na on(*) symbol vcs(ih) rds(on) id(on) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds = vgs id = 250 ^a vgs = 10v id= 4a vds > ld(on) * rds(on)max vgs = 10 v min. 2.25 7.2 typ. 3 1.3 max. 3.75 1.5 unit v q a dynamic symbol 9fs (*) ciss coss crss parameter forward transconductance input capacitance output capacitance reverse transfer capacitance test conditions vds > ld(on) x rds(on)max id = 4 a vds = 25 v f = 1 mhz vgs = 0 min. 4.5 typ. 7.9 1750 188 50 max. 2300 245 70 unit s pf pf pf
STW8NA80 sth8na80fi electrical characteristics (continued) switching on symbol td(on) tr (di/dt)qn qg q8s qgd parameter turn-on time rise time turn-on current slope total gate charge gate-source charge gate-drain charge test conditions vdd = 400 v id=4a rg = 4.7u vgs = 10v vdd = 640 v id = 8 a rg= 47 ij vgs = 10 v vdd = 400 v id = 8 a vcs=10v min. typ. 20 28 170 75 10 35 max. 28 38 100 unit ns ns a/us nc nc nc switching off symbol tr(voff) tf tc parameter off-voltage rise time fall time cross-over time test conditions vdd = 640 v lo=8a rg = 4.7 11 vgs = 10v min. typ. 18 20 25 max. 25 28 35 unit ns ns ns source drain diode symbol isd isdm(') vsd (*) trr qrr irrm parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery reverse recovery charge reverse recovery current test conditions isd = 7.2 a vgs = 0 !sd= 7.5 a di/dt = 100 a/u.s vdd = 100v t, = 150c min. typ. 850 17 40 max. 7.2 28.8 1.6 unit a a v ns u.c a (*) pulsed: pulse duration = 300 \is, duty cycle 1.5 % (?) pulse width limited by safe operating area
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